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Mosong Cheng
Assistant Professor
Office number: 216P Zachry Engineering Center
Office phone number: (979) 862-4985
FAX number: (979) 845-6259

 

 

 

 

 

 

Education

Ph.D. in Electrical Engineering and Computer Science, University of California, Berkeley, May 2002
B.S. in Electrical Engineering, University of Science and Technology of China, June 1997

Positions Held

Assistant Professor, Department of Electrical Engineering, Texas A&M University, June 2002 - present
Process Engineer Intern, Texas Instruments, Sept-Dec 1999, June-Sept 2000, June-August 2001

Interest areas

• Solid-State
  High-resolution lithography and plasma etch
  Nano-scale CMOS sensors
  
• Nano electro-optics
  
• Micro Electromechanical Systems
  

Courses taught

ELEN 370 Electrical Properties of Materials
ELEN 322 Electric and Magnetic Field

Honors and Awards

• Tokyo Electron Ltd. Research Award, 2003
• University of California Regents Fellowship, 1997- 1998
• BAOSHAN IRON & STEEL CORPORATION (BAOSTEEL) Scholarship, 1996 (Awarded nation-wide)

Professional Membership

SPIE - the International Society for Optical Engineering

Publications

Patent

1. "Method for Enhancing Resist Sensitivity and Resolution by Application of an Alternating Electric Field During Post-Exposure Bake", US patent application serial No. 09/840,638, filed on July 18, 2001, allowed on July 28, 2003
2. "Multi-beam near-field scanning optical microscopy, a novel apparatus for maskless lithography, microscopy and data storage", invention disclosed to Texas Engineering Experiment Station

Journal Papers under Review

1. C. Liu and M. Cheng, "Characterizing positive chemically amplified resist via in-situ impedance monitoring", submitted to J. Vacuum Sci. Technol. B, Nov/Dec 2003

Journal Papers

1. M. Cheng, J. Poppy, and A. Neureuther, "Effects of Treatment Parameters in Electric-Field Enhanced Post-Exposure Bake", J. Vacuum Sci. Technol. B, Jul/Aug 2003
2. M. Cheng, L. Yuan, E. Croffie, A. Neureuther, "Improving Resist Resolution and Sensitivity via Electric-Field Enhanced Post-Exposure Baking", J. Vac. Sci. Technol. B vol. 20, p.734 (2002)
3. M. Cheng, Ebo Croffie, Lei Yuan, and A. Neureuther, "Enhancement of resist resolution and sensitivity via applied electric field", J. Vac. Sci. Technol. B vol. 18, p.3318 (2000)
4. E. Croffie, L. Yuan, M. Cheng, A. Neureuther, F. Houlihan, R. Cirelli, P. Watson, O. Nalamasu, and A. Gabor, "Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging", J. Vac. Sci. Technol. B vol. 18, p.3340 (2000)
5. E. Croffie, M. Cheng, A. Neureuther, R. Cirelli, F. Houlihan, J. Sweeney, P. Watson, O. Nalamasu, I. Rushkin, O. Dimov and A. Gabor, "Overview of the STORM program application to 193 nm single layer resists", Microelectronic Engineering, vol.53, p.437 (2000)
6. M. Cheng, J. Tyminski, E. Croffie, and Andrew Neureuther, "Modeling anomalous depth dependent dissolution effects in chemically amplified resists", J. Vac. Sci. Technol. B vol. 18, p.1294 (2000)
7. E. Croffie, M. Cheng, and A. Neureuther, "Moving boundary transport model for acid diffusion in chemically amplified resists", J. Vac. Sci. Technol. B vol.17, p.3339 (1999)
8. M. Cheng, R. Zhu, "An triangular-function basis algorithm for simulating arbitrarily curved surfaces in 3D space", J. of Computer Aided Geometry Design and Computer Graphics, No. 2 (1996)
9. M. Cheng, K. Chen, R. Zhu, "A shadow-testing acceleration technique for ray tracing", J. of China Univ. of Sci. & Tech., No. 2 (1996)

Conference Papers

1. M. Cheng, B. C. P. Ho, and D. Guenther, "Impact of mask topography and resist effects on optical proximity correction in advanced alternating phase shift process", to appear in Proc. SPIE, vol. 5040 (2003)
2. M. Cheng, B. C. P. Ho, and K. Nafus, "Simulation of sub-90-nm node complementary phase-shift processes with ArF lithography", to appear in Proc. SPIE, vol. 5040 (2003)
3. B. C. P. Ho, D. Guenther, M. Cheng, A. Rudack, M. Kwon, M. Ickes, R. Yamaguchi, B. Brown, K. Nafus, "Line edge roughness optimization on 300 mm DUV alternating phase shift processes", to appear in Proc. SPIE, vol. 5039 (2003)
4. M. Cheng, A. Neureuther,"Effects of Residual Aberrations on Line-end Shortening in 193 nm Lithography", Proc. SPIE, vol. 4691, p.1421 (2002)
5. M. Cheng, A. Neureuther, K. Kim, M. Ma, W. Kim, M. Hanratty, "OPC Rectification of Random Space Patterns in 193nm Lithography", Proc. SPIE, vol. 4691, p.1308 (2002)
6. M. Cheng and A. Neureuther, "ArF imaging modeling by using resist simulation and pattern matching", Proc. SPIE, vol. 4346, p.309 (2001)
7. S. Lee, K. Ng, T. Orimoto, J. Pittenger, T. Horie, K. Adam, M. Cheng, E. Croffie, Y. Deng, F. Gennari, T. Pistor, G. Robins, M. Williamson, B. Wu, L. Yuan, A. Neureuther, "LAVA web-based remote simulation: enhancements for education and technology innovation", Proc. SPIE, vol. 4346, p.1500 (2001)
8. E. Croffie, L. Yuan, M. Cheng, A. Neureuther, "Survey of chemically amplified resist models and simulator algorithms", Proc. SPIE, vol. 4345, p.983 (2001)
9. L. Yuan, M. Cheng, E. Croffie, and A. Neureuther, "Three-dimensional post-exposure modeling and its applications", Proc. SPIE, vol. 4345, p.992 (2001)
10. E. Croffie, M. Cheng, A. Neureuther, F. Houlihan, R. Cirelli, J. Sweeney, G. Dabbagh, G. Watson, O. Nalamasu, I. Rushkin, O. Dimov, A. Gabor, "Modeling chemically amplified resists for 193-nm lithography", Proc. SPIE, vol. 3999, p.171 (2000)
11. M. Cheng, E. Croffie, A. Neureuther, "Fast imaging algorithm for simulating pattern transfer in deep-UV resist and extracting post exposure bake parameters", Proc. SPIE, vol. 3999, p.854 (2000)
12. M. Cheng, E. Croffie, A. Neureuther, "Methodology for modeling and simulating line-end shortening effects in deep-UV resist", Proc. SPIE, vol. 3678, p.867 (1999)
13. E. Croffie, M. Cheng, M. A. Zuniga, A. Neureuther, "Efficient simulation of post exposure bake processes in STORM", Proc. SPIE, vol. 3678, p.1227 (1999)